Why 4DS Memory Exceeds Expectations with Breakthrough Memory Technology?
4ds Memory Limited
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Why 4DS Memory Exceeds Expectations with Breakthrough Memory Technology?

Successful Analysis of Fourth Platform Lot Reveals Impressive Results

MEGABIT SUCCESS 4DS Memory Limited (ASX:4DS) (4DS) is excited to announce that the analysis of the Fourth Platform Lot has yielded results that surpass the expectations of the Board and management team at 4DS.

Breakthroughs in ReRAM Memory Cells and Technology Transfer

The thorough analysis of the Fourth Platform Lot has confirmed key achievements for 4DS. The company has successfully incorporated its ReRAM memory cells into the imec megabit array, showcasing the transferability of their Interface Switching ReRAM technology from fab to fab. Furthermore, a fully functional megabit array with 4DS Interface Switching ReRAM memory cells has been demonstrated, with read and write speeds equivalent to DRAM. This breakthrough in speed has been combined with exceptional endurance, exceeding 2 billion cycles at DRAM read and write speed on a megabit array. Finally, 4DS has showcased the development of persistent memory with variable and tuneable retention.

Background Progress and Optimizations

The journey to these achievements started with an ASX announcement on 5 October 2022, where 4DS acknowledged the damage induced by the etch process to the crystallinity of the 4DS PCMO layer.

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This damage resulted in the write voltage required to program the cell exceeding the voltage that the circuitry of the imec megabit memory array could provide. To address this challenge, 4DS focused on optimizing the etch process to achieve residue-free etching and avoid crystalline damage to the PCMO layer.

On 27 February 2023, 4DS shared that they had made significant optimization changes, which were implemented in the manufacturing of the Fourth Platform Lot at imec. Additionally, the company reported successful cell operation in the megabit memory array of the Third Platform Lot, utilizing improved test capabilities. These positive results paved the way for further exploration of optimized programming conditions with the access transistors and write circuitry of imec's megabit memory platform. The compatibility of the 4DS Interface Switching ReRAM cells with imec's megabit memory platform was confirmed, reducing risk in the testing of the Fourth Platform Lot.

Successful Integration into imec's Megabit Array

Thanks to extensive development activities since 5 October 2022, MEGABIT SUCCESS 4DS Memory Limited has successfully transferred all new process improvements and learning cycles from the Stanford Nanofabrication Facility into imec's megabit array. These improvements include modifications to the PCMO etch process and the composition of the memory cells. The successful validation of technology optimization across fabrication facilities showcases the exceptional potential of 4DS's advancements.

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